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1/11 april 2002 . stp75nf75 stb75nf75 STB75NF75-1 n-channel 75v - 0.01 w -75ad 2 pak/i 2 pak/to-220 stripfet ? ii power mosfet n typical r ds (on) = 0.01 w n exceptional dv/dt capability n 100% avalanche tested n application oriented characterization description this mosfet series realized with stmicroelectronics unique stripfet process has specifically been designed to minimize input capacitance and gate charge. it is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated dc-dc converters for telecom and computer applications. it is also intended for any applications with low gate drive requirements. applications n solenoid and relay drivers n dc motor control n dc-dc converters n automotive environment type v dss r ds(on) i d stb75nf75/-1 stp75nf75 75 v 75 v <0.013 w <0.013 w 75 a 75 a 1 2 3 1 3 1 2 3 to-220 d 2 pak to-263 i 2 pak to-262 absolute maximum ratings ( ? ) current limited by package ( ?? ) pulse width limited by safe operating area. (1) i sd 75a, di/dt 300a/ m s, v dd v (br)dss ,t j t jmax. (2) starting t j =25 o c, i d = 37.5a, v dd = 30v symbol parameter value unit v ds drain-source voltage (v gs =0) 75 v v dgr drain-gate voltage (r gs =20k w ) 75 v v gs gate- source voltage 20 v i d ( ? ) drain current (continuous) at t c =25 c 75 a i d drain current (continuous) at t c = 100 c 70 a i dm ( ?? ) drain current (pulsed) 300 a p tot total dissipation at t c =25 c300w derating factor 2 w/ c dv/dt (1) peak diode recovery voltage slope 20 v/ns e as (2) single pulse avalanche energy 680 mj t stg storage temperature -55 to 175 c t j max. operating junction temperature internal schematic diagram
stb75nf75/-1/stp75nf75 2/11 thermal data electrical characteristics (t case =25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max typ 0.5 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m av gs =0 75 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating t c = 125 c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs =10v i d = 37.5 a 0.01 0.013 w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d = 37.5 a 17 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 3900 660 210 pf pf pf
3/11 stb75nf75/-1/stp75nf75 switching on switching off source drain diode (*) pulsed: pulse duration = 300 m s, duty cycle 1.5 %. ( ? ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =40v i d = 37.5 a r g = 4.7 w v gs =10v (resistive load, figure 3) 27 100 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 60v i d =75av gs = 10v 110 24 42 130 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd =40v i d = 37.5 a r g = 4.7 w, v gs =10v (resistive load, figure 3) 75 25 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 75 300 a a v sd (*) forward on voltage i sd =75a v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 75 a di/dt = 100a/ m s v dd =20v t j = 150 c (see test circuit, figure 5) 100 380 7.5 ns nc a electrical characteristics (continued) safe operating area thermal impedance
stb75nf75/-1/stp75nf75 4/11 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/11 stb75nf75/-1/stp75nf75 .. normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature. ..
stb75nf75/-1/stp75nf75 6/11 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/11 stb75nf75/-1/stp75nf75 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.016 v2 0 8 0 8 d 2 pak mechanical data
stb75nf75/-1/stp75nf75 8/11 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
9/11 stb75nf75/-1/stp75nf75 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stb75nf75/-1/stp75nf75 10/11 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r 50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix ot4o)* d 2 pak footprint tape mechanical data
11/11 stb75nf75/-1/stp75nf75 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express writt en approval of stmicroelectronics. the st logo is registered trademark of stmicroelectronics ? 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

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